Technische Universität Dresden

Yi Li

Yi Li
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Prof. Yi Li
Huazhong University of Science and Technology
School of Integrated Circuits
Luoyu Road 1037, Wuhan 430074, Hubei, China

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email: liyi@hust.edu.cn

Research Field and Activities

  • High-performance memristive devices
  • Memristor-based machine learning acceleration
  • Memristor storage and computing integration technology

Short Biography

Yi Li is currently the deputy dean and professor of the School of Integrated Circuits, Huazhong University of Science and Technology. He is also the Deputy Director of Hubei Provincial Key Laboratory of Advanced Memory and is the co-founder of the Chua Memristor Institute in Wuhan, China.

He received B. S. and Ph.D. degree in Microelectronics from Huazhong University in 2009 and 2014, respectively. In 2016, he was a short-term visiting scholar in Department of Physics, National Sun Yat-Sen University, Taiwan.

His research interest includes the development of emerging semiconductor devices, such as memristor and resistive random access memory (RRAM), for emerging applications in neuromorphic computing and in-memory computing. He is also involved in the advancement of in-memory computing through cross-level collaborative design of hardware and architecture.

He has presided over major research projects and programs. These include the “Brain Science and Brain-like Research” initiative under the National Science and Technology Innovation 2030, the “Basic Research on New Devices in the Post-Moore Era”, a major research program by the National Natural Science Foundation of China (NSFC). In addition to these, he has collaborated with Huawei on three research projects. His contributions extend to the National Key Research and Development Program, Key Research and Development Young Scientist Program, National Natural Science Foundation of China, and the Emergency Program of the Ministry of Information Science and Technology. His work has been integral to various national projects.

He has published over 90 papers in international journals, such as Advanced Functional Materials, Advanced Science, Advanced Electronic Materials, Advanced Intelligent Systems, InfoMat, Nano Letters, Nanoscale, ACS Applied Materials & Interfaces, IEEE EDL/TED/TCASII, APL, JAP, etc. and applied for more than 90 invention patents, and 13 US patents and more than 50 Chinese invention patents.

Selection of recent publications

  • Y. Li, Y. Zhong, L. Xu, et al., “Ultrafast Synaptic Events in a Chalcogenide Memristor,” Scientific Reports, vol. 3, no. 1619, 2013. DOI: https://doi.org/10.1038/srep01619
  • Y. Li, Y. Zhong, J. Zhang, et al., “Activity-Dependent Synaptic Plasticity of a Chalcogenide Electronic Synapse for Neuromorphic Systems,” Scientific Reports, vol. 4, no. 4906, 2014. DOI: https://doi.org/10.1038/srep04906
  • M. Xu, X. Mai, J. Lin, W. Zhang, Y. Li, Y. He, H. Tong, X. Hou, P. Zhou, and X. Miao, “Recent Advances on Neuromorphic Devices Based on Chalcogenide Phase-Change Materials,” Advanced Functional Materials, vol. 30, no. 2003419, 2020. DOI: https://doi.org/10.1002/adfm.202003419
  • Y. Zhang, X. Wang, Y. Li, and E. G. Friedman, “Memristive Model for Synaptic Circuits,” IEEE Transactions on Circuits and Systems II: Express Briefs, vol. 64, no. 7, pp. 767–771, 2017. DOI: https://doi.org/10.1109/TCSII.2016.2605069
  • Z.-R. Wang, Y.-T. Su, Y. Li, Y.-X. Zhou, T.-J. Chu, K.-C. Chang, T.-C. Chang, T.-M. Tsai, S. M. Sze, and X.-S. Miao, “Functionally Complete Boolean Logic in 1T1R Resistive Random Access Memory,” IEEE Electron Device Letters, vol. 38, no. 2, pp. 179–182, 2017. DOI: https://doi.org/10.1109/LED.2016.2645946
  • S. Kim, J. Chen, Y.-C. Chen, M.-H. Kim, H. Kim, M.-W. Kwon, S. Hwang, M. Ismail, Y. Li, X.-S. Miao, Y.-F. Chang, and B.-G. Park, “Neuronal Dynamics in HfOx/AlOy-Based Homeothermic Synaptic Memristors with Low-Power and Homogeneous Resistive Switching,” Nanoscale, vol. 11, no. 1, pp. 237–245, 2019. DOI: https://doi.org/10.1039/C8NR06694A
  • Y. Zhang, Y. Li, X. Wang, and E. G. Friedman, “Synaptic Characteristics of Ag/AgInSbTe/Ta-Based Memristor for Pattern Recognition Applications,” IEEE Transactions on Electron Devices, vol. 64, no. 4, pp. 1806–1811, 2017. DOI: https://doi.org/10.1109/TED.2017.2671433
  • J. J. Zhang, H. J. Sun, Y. Li, Q. Wang, X. H. Xu, and X. S. Miao, “AgInSbTe Memristor with Gradual Resistance Tuning,” Applied Physics Letters, vol. 102, no. 18, p. 183513, 2013. DOI: https://doi.org/10.1063/1.4804983
  • Y. Li, L. Xu, Y. P. Zhong, Y. X. Zhou, S. J. Zhong, Y. Z. Hu, L. O. Chua, and X. S. Miao, “Associative Learning with Temporal Contiguity in a Memristive Circuit for Large-Scale Neuromorphic Networks,” Advanced Electronic Materials, vol. 1, 1500125, 2015. DOI: https://doi.org/10.1002/aelm.201500125
  • X.-D. Huang, Y. Li, H.-Y. Li, K.-H. Xue, X. Wang, and X.-S. Miao, “Forming-Free, Fast, Uniform, and High Endurance Resistive Switching from Cryogenic to High Temperatures in W/AlOx/Al₂O₃/Pt Bilayer Memristor,” IEEE Electron Device Letters, vol. 41, no. 4, pp. 549–552, 2020. DOI: https://doi.org/10.1109/LED.2020.2977397