Technische Universität Dresden

Contact

Prof. Xiangshui Miao

Huazhong University of Science and Technology
School of Optical and Electronic Information
Wuhan National Laboratory for Optoelectronics
Chua Memristor Institute
Luoyu Road 1037, Wuhan 430074, China

Mail: miaoxs@hust.edu.cn

Institute of information storage materials and devices

Research Field and Activities

  • power systems and renewable energy integration.
  • Semiconductor Devices & TCAD
  • Physics-Informed Neural Networks
  • Artificial Intelligence in Electronics

Short Biography

Prof. Xiangshui Miao is the founder and director of the Chua Memristor Institute in Huazhong University of Science and Technology, Wuhan, China. He is also currently the vice dean of School of Optical and Electronic Information.

He received B. S., M.S. and Ph.D. degree in Microelectronics from Huazhong University of Science and Technology in 1986, 1989 and 1996, respectively.

From 1989 to 1996, he worked as a teaching assistant, lecturer and associate professor in Huazhong University of Science and Technology.

From 1996 to 1997, he was a researcher in City University of Hongkong.

From 1997 to 2007, he was a chief scientist in Data Storage Institute, A*STAR, Singapore.

In 2008, he returned to Huazhong University of Science and Technology as a Changjiang Professor.

His research interest includes next generation memories, including phase change memory (PCM), resistive random access memory (RRAM), memristors and their applications in neuromorphic computing and in-memory computing.

Miao has published over 300 papers in international journals, such as Nature Communications, Advanced Materials, Advanced Functional Materials, Nano Letters, ASC Nano, IEEE EDL, IEEE TED, APL, JAP, etc. and one book “Introduction to Memristor” in Chinese. Miao owned over 60 patents (over 100 pending).

He is the recipient of National Awards in China and Singapore.

Publications

  • Z. Cai, A. Huang, Y. Xiong, and X.-S. Miao, “Multi-order Differential Neural Network for TCAD Simulation of the Semiconductor Devices,” ResearchGate, 2024. DOI: 10.58009/aere-perennius0095.
  • R. Zhao, K. Gao, R. Zhu, and X.-S. Miao, “650 ps SET speed in Ge₂Sb₂Te₅ phase change memory induced by TiO₂ dielectric crystal plane,” ResearchGate, 2024. DOI: 10.58009/aere-perennius0097.
  • Z. Gan, D. Zhang, C. Zhang, and X.-S. Miao, “Efficient implementation of majority-inverter graph logic and arithmetic functions with memristor arrays,” ResearchGate, 2024. DOI: 10.58009/aere-perennius0098.
  • K. Zhang, W. Zhou, T. Li, and X.-S. Miao, “Improvement of warpage and leakage for 3D NAND flash memory,” ResearchGate, 2024. DOI: 10.58009/aere-perennius0099.
  • K. Li, J. Yao, P. Zhao, and X.-S. Miao, “Ovonic threshold switching-based artificial afferent neurons for thermal in-sensor computing,” ResearchGate, 2024. DOI: 10.58009/aere-perennius0100.
  • Z. Gan, C. Zhang, Y. Ma, and X.-S. Miao, “Efficient Implementation of Multiplexer and Full-Adder Functions Based on Memristor Arrays for In-memory Computing,” ResearchGate, 2024. DOI: 10.58009/aere-perennius0101.
  • Z. Zhang, Y. Yang, R. Su, and X.-S. Miao, “Recorded Ferroelectric Polarization Switching of Hf₀.₅Zr₀.₅O₂ Capacitors Achieved by Thermal Rewake-up,” ResearchGate, 2024. DOI: 10.58009/aere-perennius0102.
  • Z.-H. Cao, X. Wang, R. Zhu, and X.-S. Miao, “Up to 60% energy saving for GST-based confined phase change memory using paired pulses RESET operation scheme,” ResearchGate, 2024. DOI: 10.58009/aere-perennius0103.
  • J. Tian, H.-Z. Pei, S.-G. Ren, and X.-S. Miao, “High-speed Memristive Walsh-Hadamard Transform for Image Compression,” ResearchGate, 2024. DOI: 10.58009/aere-perennius0104.