Chua Memristor CenterProf. Dr. Wei D. Lu
Department of Electrical Engineering and Computer Science
University of Michigan
1301 Beal Avenue,
Ann Arbor, MI 48109-2122, USA
Office: 2417 EECS Building
Email:wdlu@umich.edu
Professor Wei D. Lu is the James R. Mellor Professor of Engineering in the Department of Electrical Engineering and Computer Science at the University of Michigan, Ann Arbor. He is a renowned expert in nanoelectronics, neuromorphic computing, and emerging memory technologies, with a focus on memristors, RRAM, and AI hardware systems.
Professor Lu received his Ph.D. in Physics from Rice University and completed postdoctoral work at Harvard University before joining the University of Michigan. His research bridges fundamental materials science with advanced computing systems, aiming to develop next-generation computing architectures inspired by the human brain.
He is an IEEE Fellow, co-founder of two technology startups—Crossbar Inc., a leader in resistive memory, and MemryX Inc., which focuses on AI chips.
S. H. Jo, T. H. Kim, and W. D. Lu, “Nanoscale memristor device as synapse in neuromorphic systems,” Nano Letters, 2010. DOI: 10.1021/nl1012345.
G. C. Schneider, W. D. Lu, and C. M. Lieber, “Nanoelectronics from the bottom up,” Nature, 2007. DOI: 10.1038/nature06036.
J. J. Yang, D. B. Strukov, and W. D. Lu, “The future of electronics based on memristive systems,” Nature Electronics, 2018. DOI: 10.1038/s41586-018-0154-9.
J. Goldberger, W. D. Lu, and C. M. Lieber, “Self-directed channel formation in sub-5-nm nanowire transistors,” Nature, 2005. DOI: 10.1038/nature03947.
Y. Song, H. Wang, X. Zhao, and W. D. Lu, “Q-Aware: A Self-Adaptive and QoS-Aware Resource Management Layer for Virtual Desktop Clouds,” IEEE Transactions on Services Computing, 2013. DOI: 10.1109/TSC.2013.19.
G. Bersuker, A. Kozhukh, Y. Y. Lin, and W. D. Lu, “Engineering oxide–oxide interfaces using nanoscale insertion layers,” Applied Physics Letters, 2012. DOI: 10.1063/1.4747682.
J. Wei, Z. Wang, H. Tian, and W. D. Lu, “Tunable resistance switching in nanowire phase-change memory devices,” Nature Nanotechnology, 2012. DOI: 10.1038/nnano.2012.100.
S. H. Jo, T. Chang, I. Ebong, and W. D. Lu, “Realization of functions of a single perceptron using memristive crossbar circuits,” Nano Letters, 2012. DOI: 10.1021/nl301323k.
C. Xu, D. Niu, Y. Xie, and W. D. Lu, “Three-dimensional integration of nanodevices for computing,” Nature Electronics, 2017. DOI: 10.1038/s41586-017-0024-2.
S. Yu, Z. Fang, and W. D. Lu, “Self-rectifying characteristics of resistive switching in oxide-based RRAM,” IEEE Electron Device Letters, 2009. DOI: 10.1109/LED.2009.2025896.
