Thomas Kämpfe

Co-Optimization of materials, integration, device, circuits for memristor systems.

Contact

Prof. Dr. Thomas Kämpfe

Fraunhofer Institute for Photonic Microsystems IPMS, An der Bartlake 5, 01109 Dresden, Germany

Email: Thomas.kaempfe@ipms.fraunhofer.de

Email:thomas.kaempfe@tu-braunschweig.de

Telephone: +49 (0)351 2607-3215

Telephone: +49 (0)531 391-7490

Research Field and Activities

Memristive and nanoelectronic devices
In-memory computing circuits and systems
Neuromorphic computing with memristive devices
CMOS design based on memristor devices
High-frequency applications of memristors

Short Biography

Thomas Kämpfe serves as a Full Professor at TU Braunschweig as well as Head of Department Components & Systems as well as Group Manager for Neuromorphic Systems at Fraunhofer IPMS. He earned his habilitation in electrical engineering in 2022 and his Ph.D. in Physics in 2016, both from TU Dresden. Following research scholar positions at the University of Colorado at Boulder and Stanford University, he joined the Fraunhofer Society in 2017. Dr. Kämpfe has authored over 250 peer-reviewed articles in prestigious journals and conferences such as Nature Communications, ACS Nano, Advanced Functional Materials, IEDM, VLSI, ESSCIRC, and DATE. His research focuses on brain-inspired computing, approximation computing, and computing-in-memory. In recognition of his contributions, he was awarded the George-E-Smith Award in 2023, the Dresden Excellence Award in 2023, the Excellent Paper Award at RFIT 2022, and received a Best Paper Nomination in DATE 2021 and 2023. Dr. Kämpfe has actively contributed to various international conferences, serving on the technical program committee for events like IEDM, DAC, DATE, DRC, EDTM, ASP-DAC, ICICDT, and AICAS.

Publications

T. Clausnitzer, T. Kämpfe, E.B. Kley, A. Tünnermann, U. Peschel, and O. Parriaux, “An intelligible explanation of highly-efficient diffraction in deep dielectric rectangular transmission gratings,” Optics Express, vol. 13, no. 26, pp. 10448–10456, 2005. DOI: 10.1364/oe.13.010448.
T. Clausnitzer, T. Kämpfe, E.B. Kley, A. Tünnermann, A.V. Tishchenko, and O. Parriaux, “Highly-dispersive dielectric transmission gratings with 100% diffraction efficiency,” Optics Express, vol. 16, no. 8, pp. 5577–5584, 2008. DOI: 10.1364/oe.16.005577.
T. Clausnitzer, T. Kämpfe, E.B. Kley, A. Tünnermann, A. Tishchenko, and O. Parriaux, “Investigation of the polarization-dependent diffraction of deep dielectric rectangular transmission gratings illuminated in Littrow mounting,” Applied Optics, vol. 46, no. 6, pp. 819–825, 2007. DOI: 10.1364/ao.46.000819.
W. Freese, T. Kämpfe, E.B. Kley, and A. Tünnermann, “Design of binary subwavelength multiphase level computer-generated holograms,” Optics Letters, vol. 35, no. 5, pp. 676–678, 2010. DOI: 10.1364/ol.35.000676.
T. Kämpfe, E.B. Kley, A. Tünnermann, and P. Dannberg, “Design and fabrication of stacked, computer-generated holograms for multicolor image generation,” Applied Optics, vol. 46, no. 22, pp. 5482–5488, 2007. DOI: 10.1364/ao.46.005482.
T. Clausnitzer, T. Kämpfe, F. Brückner, R. Heinze, E.B. Kley, and A. Tünnermann, “Reflection-reduced encapsulated transmission grating,” Optics Letters, vol. 33, no. 17, pp. 1972–1974, 2008. DOI: 10.1364/ol.33.001972.
T. Soliman, S. Chatterjee, N. Laleni, F. Müller, T. Kirchner, N. Wehn, T. Kämpfe, Y. S. Chauhan and H. Amrouch, “First demonstration of in-memory computing crossbar using multi-level Cell FeFET,” Nature Communications, vol. 14, pp. 6348, 2023. DOI: https://doi.org/10.1038/s41467-023-42110-y.

X. Yin, Y. Qian, A. Vardar, M. Günther, F. Müller, N. Laleni, Z. Zhao, Z. Jiang, Z. Shi, Y. Shi, X. Gong, C. Zhuo, T. Kämpfe, K. Ni, “Ferroelectric compute-in-memory annealer for combinatorial optimization problems,” Nature Communications, vol. 15, no. 1, pp. 2419, 2024. DOI: https://doi.org/10.1038/s41467-024-46640-x.

S. De, F. Müller, N. Laleni, M. Lederer, Y. Raffel, S. Mojumder, S. Abdulazhanov, T. Ali, S. Dünkel, S. Beyer, K. Seidel, T. Kämpfe, “Demonstration of Multiply-Accumulate Operation with 28 nm FeFET Crossbar Array,” IEEE Electron Device Letters, vol. 43, no. 12, pp. 2081–2084, 2022. (George-E.-Smith Award of IEEE EDS) DOI: https://doi.org/10.1109/LED.2022.3211374.

F. Ali, T. Ali, D. Lehninger, A. Sünbül, A. Viegas, R. Sachdeva, A. Abbas, M. Czernohorsky, K. Seidel, T. Kämpfe, “Fluorite-Structured Ferroelectric and Antiferroelectric Materials: A Gateway of Miniaturized Electronic Devices,” Advanced Functional Materials, vol. 32, no. 31, 2205606, 2022. DOI: https://doi.org/10.1002/adfm.202201737.