Stefan Slesazeck

Contact

Prof. Dr. Stefan Slesazeck
Senior Scientist at NaMLab gGmbH

Email:info@namlab.com

Research Field and Activities

Emerging Non-Volatile Memories
Negative Capacitance Devices
Memristive Devices and Neuromorphic Computing

Short Biography

Dr. Stefan Slesazeck is a Senior Scientist at NaMLab gGmbH in Dresden, Germany, where he leads research in emerging memory technologies and novel device concepts. With a Ph.D. in electrical engineering and over two decades of experience, his work focuses on ferroelectric FETs (FeFETs), memristive devices, negative capacitance phenomena, and neuromorphic hardware.

Dr. Slesazeck has authored or co-authored over 200 scientific publications and holds multiple patents in the field of nanoelectronics. He is a recognized expert in device modeling, electrical characterization, and in-memory computing, contributing significantly to the development of energy-efficient and scalable memory technologies.

His research bridges the gap between fundamental materials science and practical semiconductor applications, and he actively collaborates with both academic institutions and semiconductor industries.

References / Publications

M. Pešić, F. P. G. Fengler, L. Larcher, A. Padovani, T. Schenk, E. D. Grimley, U. Schroeder, S. Slesazeck, and T. Mikolajick, “Physical Mechanisms behind the Field‐Cycling Behavior of HfO₂‐Based Ferroelectric Capacitors,” Advanced Functional Materials, vol. 26, no. 25, pp. 4601–4612, 2016. DOI: 10.1002/adfm.201600590.
S. Dünkel, M. Trentzsch, R. Richter, P. Moll, C. Fuchs, O. Gehring, M. Majer, D. Adamer, T. Melde, B. Müller, S. Beyer, S. Slesazeck, and T. Mikolajick, “A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond,” in 2017 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2017. DOI: 10.1109/IEDM.2017.8268372.
D. V. Christensen, R. Dittmann, B. Linares-Barranco, S. Slesazeck, A. Sebastian, T. Mikolajick, I. Valov, and E. Eleftheriou, “2022 roadmap on neuromorphic computing and engineering,” Neuromorphic Computing and Engineering, vol. 2, no. 2, 2022. DOI: 10.1088/2634-4386/ac4a83.
T. Mikolajick, S. Slesazeck, and U. Schroeder, “The past, the present, and the future of ferroelectric memories,” IEEE Transactions on Electron Devices, vol. 67, no. 4, pp. 1434–1443, 2020. DOI: 10.1109/TED.2020.2976148.
M. Hoffmann, S. Slesazeck, F. P. G. Fengler, M. Herzig, T. Mittmann, B. Max, U. Schroeder, and T. Mikolajick, “Unveiling the double-well energy landscape in a ferroelectric layer,” Nature, vol. 565, pp. 464–467, 2019. DOI: 10.1038/s41586-018-0854-z.