Chua Memristor CenterProf. Dr. Stefan Slesazeck
Senior Scientist at NaMLab gGmbH
Email:info@namlab.com
Dr. Stefan Slesazeck is a Senior Scientist at NaMLab gGmbH in Dresden, Germany, where he leads research in emerging memory technologies and novel device concepts. With a Ph.D. in electrical engineering and over two decades of experience, his work focuses on ferroelectric FETs (FeFETs), memristive devices, negative capacitance phenomena, and neuromorphic hardware.
Dr. Slesazeck has authored or co-authored over 200 scientific publications and holds multiple patents in the field of nanoelectronics. He is a recognized expert in device modeling, electrical characterization, and in-memory computing, contributing significantly to the development of energy-efficient and scalable memory technologies.
His research bridges the gap between fundamental materials science and practical semiconductor applications, and he actively collaborates with both academic institutions and semiconductor industries.
“Physical Mechanisms behind the Field‐Cycling Behavior of HfO₂‐Based Ferroelectric Capacitors”
Co-authors: Milan Pešić, Franz P. G. Fengler, Luca Larcher, Andrea Padovani, Tony Schenk, Elizabeth D. Grimley, Uwe Schroeder, Thomas Mikolajick
Publication: Advanced Functional Materials, 2016
“A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond”
Co-authors: Stefan Dünkel, Martin Trentzsch, Ralf Richter, Peter Moll, Christian Fuchs, Oliver Gehring, Matthias Majer, Dirk Adamer, Thomas Melde, Bert Müller, Sven Beyer, Stefan Slesazeck, Thomas Mikolajick
Publication: 2017 IEEE International Electron Devices Meeting (IEDM)
“2022 roadmap on neuromorphic computing and engineering”
Co-authors: David V. Christensen, Rainer Dittmann, Bernabé Linares-Barranco, Abu Sebastian, Thomas Mikolajick, Ilia Valov, Evangelos Eleftheriou, Regina Dittmann, Bernabe Linares-Barranco, Abu Sebastian, Thomas Mikolajick, Ilia Valov, Evangelos Eleftheriou
Publication: Neuromorphic Computing and Engineering, 2022
“The past, the present, and the future of ferroelectric memories”
Co-authors: Thomas Mikolajick, Uwe Schroeder
Publication: IEEE Transactions on Electron Devices, 2020
“Unveiling the double-well energy landscape in a ferroelectric layer”
Co-authors: Michael Hoffmann, Franz P. G. Fengler, Matthias Herzig, Terence Mittmann, Benjamin Max, Uwe Schroeder, Thomas Mikolajick
Publication: Nature, 2019
“Next generation ferroelectric materials for semiconductor process integration and their applications”
Co-authors: Thomas Mikolajick, Halid Mulaosmanovic, Min Hyuk Park, Stefan Fichtner, Uwe Schroeder
Publication: Journal of Applied Physics, 2021
“Ferroelectricity in HfO₂ enables nonvolatile data storage in 28 nm HKMG”
Co-authors: Johannes Müller, Ekaterina Yurchuk, Thomas Schlösser, Jan Paul, Ralf Hoffmann, Stefan Müller, Dominik Martin, Uwe Schroeder, Thomas Mikolajick
Publication: 2012 Symposium on VLSI Technology (VLSIT)
“Switching kinetics in nanoscale hafnium oxide based ferroelectric field-effect transistors”
Co-authors: Halid Mulaosmanovic, Johannes Ocker, Stefan Müller, Uwe Schroeder, Johannes Müller, Thomas Mikolajick
Publication: ACS Applied Materials & Interfaces, 2017
“Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors”
Co-authors: Thomas Mikolajick, Min Hyuk Park, Uwe Schroeder
Publication: MRS Bulletin, 2018
“Direct Observation of Negative Capacitance in Polycrystalline Ferroelectric HfO₂”
Co-authors: Michael Hoffmann, Milan Pešić, Koushik Chatterjee, Asif Islam Khan, Sayeef Salahuddin, Uwe Schroeder, Thomas Mikolajick
Publication: Advanced Functional Materials, 2016
