Chua Memristor CenterIoannis Messaris, M.Sc.
Technische Universität Dresden
Fakultät Elektrotechnik und Informationstechnik
Institut für Grundlagen der Elektrotechnik und Elektronik
Professur für Grundlagen der Elektrotechnik
Mommsenstr. 12, Toeplerbau, 01069 Dresden
+49 351 463 41133
Chair of fundamentals of electrical engineering
Ioannis Messaris received his PhD in Electronics Physics from the Aristotle University of Thessaloniki (AUTH) in 2019. Since 2018 he is a research associate at the Faculty of Electrical and Computer Engineering, Technische Universität Dresden. His research interests lie in the area of memristor theory and modeling, as well as memristor-equipped Cellular Non-linear Networks (M-CNNs). He has been Program Chair and Session Chair for the International Conference on Memristive Materials, Devices, and Systems (MEMRISYS) 2019.
R. Tetzlaff, A. Ascoli, I. Messaris, and L. O. Chua, “Theoretical Foundations of Memristor Cellular Nonlinear Networks: Memcomputing with Bistable-like Memristors,” IEEE Trans. Circuits Syst. I Regul. Pap., vol. 67, no. 2, pp. 502–515, 2020. DOI: 10.1109/TCSI.2019.2940909.
A. Ascoli, I. Messaris, R. Tetzlaff, and L. O. Chua, “Theoretical Foundations of Memristor Cellular Nonlinear Networks: Stability Analysis with Dynamic Memristors,” IEEE Trans. Circuits Syst. I Regul. Pap., vol. 67, no. 3, pp. 1015–1028, 2020. DOI: 10.1109/TCSI.2020.2978460.
I. Messaris, A. Serb, S. Stathopoulos, A. Khiat, S. Nikolaidis, and T. Prodromakis, “A data-driven Verilog-A ReRAM model,” IEEE Trans. Comput. Des. Integr. Circuits Syst., vol. 37, no. 12, pp. 3151–3162, 2018. DOI: 10.1109/TCAD.2018.2791468.
I. Messaris, C. Galani, M. Ntogramatzi, N. Karagiorgos, P. Chaourani, A. Tzormpatzoglou, S. Goudos, and S. Nikolaidis, “An Evaluation of the Equivalent Inverter Modeling Approach,” Circuits, Syst. Signal Process., vol. 37, no. 7, pp. 2665–2693, 2018. DOI: 10.1007/s00034-017-0692-5.
I. Messaris, T. A. Karatsori, N. Fasarakis, C. G. Theodorou, S. Nikolaidis, G. Ghibaudo, and C. A. Dimitriadis, “Hot carrier degradation modeling of short-channel n-FinFETs suitable for circuit simulators,” Microelectron. Reliab., vol. 56, no. 5, pp. 1093–1098, 2016. DOI: 10.1016/j.microrel.2016.05.012.
