Technische Universität Dresden

Hermann Kohlstedt

Hermann Kohlstedt

Build it and you understand it.

Contact Hermann Kohlstedt
ORCID

Contact

Kiel University
Faculty of Engineering
Institute for Electrical Engineering and Information Technology
Chair of Nanoelectronics
Kaiserstr. 2
24143 Kiel, Germany


+49 4310880 6075
+49 431 880 6077


at Kiel University

Research Field and Activities

 

  • Memristive devices and circuits for bio-inspired electronics
  • Ferroelectric and multiferroic tunnel junctions for non-volatile memories
  • Interface and surface spectroscopy using photons and electrons
  • Thin film technology and device patterning

Short Biography

Hermann Kohlstedt is Professor of Nanoelectronics at the Engineering Department of the Christian-Albrechts University (CAU) Kiel, Germany. Prior to this appointment at CAU, he was leading a research group from 1991 to 2009 at the Research Center Jülich, Germany that focused on advanced electronic device concepts and associated materials-processing issues. From 1986 to 1989 he worked at the Institute for Millimeterwave Radiostronomy (IRAM) in Grenoble, France and received his PhD in Physics from the Kassel University in 1989 on superconducting tunnel junctions for heterodyne receivers. From 1990 to 1991 he held a one year appointment at the Advantest Corporation in Sapporo, Japan.

His representative work includes metallic and complex oxide superconducting -, magnetic – and ferroelectric tunnel junctions in the frame work of transport properties and thin film analysis. In 2005/06 he was on sabbatical at the Materials Science Department of the UC Berkeley and the Advanced Light Source (ALS) at the Lawrence Berkeley National Laboratory, USA. Since 2009 he is working in the field of memristive device for neuromorphic circuits and he is spokes person of the DFG (German Research Society) Research Unit RU 2093 entitled: “Memristive Devices for neuronal Systems”. He authored and co-authored more than 170 papers in peer-review journals.

References / Teachings

  • E. Kröger, A. Petraru, A. Quer, R. Soni, M. Kalläne, N. A. Pertsev, H. Kohlstedt, and K. Rossnagel, In-situ hard x-ray photoemission spectroscopy of barrier-height control at metal/PMN-PT interfaces, Phys. Rev. B 93, 235415 (2016). DOI: 10.1103/PhysRevB.93.235415

  • M. Ignatov, M. Hansen, M. Ziegler, H. Kohlstedt, Synchronization of two memristively coupled van der Pol oscillators, Appl. Phys. Lett. 108, 084105 (2016). DOI: 10.1063/1.4941284

  • S. Jeong, R. Thomas, R. Katiyar, J. F. Scott, H. Kohlstedt, A. Petraru, and Hwang, C. S., Emerging memories: resistive switching mechanisms and current status, Rep. Prog. Phys. 75, 076502 (2012). DOI: 10.1088/0034-4885/75/7/076502

  • M. Ziegler, R. Soni, Patelczyk, M. Ignatov, T. Bartsch, P. Meuffels, P., and H. Kohlstedt, An electronic version of Pavlov’s dog, Adv. Func. Mat. 143, 2744 (2012). DOI: 10.1002/adfm.201103085

  • Soni, A. Petrau, P. Meuffels, O. Vavra, M. Ziegler, S. K. Kim, D. S. Jeong, N. A. Pertsev, and H. Kohlstedt: Giant electrode effect on tunneling electroresistance in ferroelectric tunnel junctions, Nature Comm. 5, 5414 (2014). DOI: 10.1038/ncomms6414

  • M. Ziegler, O. Harnack, H. Kohlstedt: Resistive switching in lateral junctions with nanometer separated electrodes, Solid-State Electronics 92, 24 (2014). DOI: 10.1016/j.sse.2014.04.012

  • Ruppelt, O. Vavra, H. Sickinger, E. Goldobin, D. Koelle, R. Kleiner, H. Kohlstedt, H. Combinatorial sputtering in planetary type systems for alloy libraries with perpendicular gradients of layer thickness and composition realized by a timing approach, Applied Physics A 116, 229 (2014). DOI: 10.1007/s00339-014-8286-1

  • Ziegler, K. Ochs, M. Hansen, H. Kohlstedt, An electronic implementation of amoeba anticipation, Appl. Phys. A 114, 565 (2014). DOI: 10.1007/s00339-013-8243-3

  • M. Ziegler, M. Hansen, M. Ignatov, and H. Kohlstedt, Building memristive neurons and synapses, IEEE International Symposium on Circuits and Systems (ISCAS) 1069 (2014). DOI: 10.1109/ISCAS.2014.6865177

  • S. Prokhorenko, H. Kohlstedt, and N. A. Pertsev, Ferroelectric-ferromagnetic multilayers: A magnetoelectric heterostructure with high output charge signal, Journal of Applied Physics 116, 114107 (2014). DOI: 10.1063/1.4895410

  • D. S. Jeong, I. Kim, Inho, M. Ziegler, and H. Kohlstedt, Towards artificial neurons and synapses: a materials point of view, RSC Adv. 3, 3169 (2013). DOI: 10.1039/c3ra23855d

  • A. Petraru, R. Soni and H. Kohlstedt: Voltage controlled biaxial strain in VO2 films grown on 0.72Pb(Mg1∕3Nb2∕3)-0.28PbTiO3 crystals and its effect on the transition, Appl. Phys. Lett. 105, 092902 (2014). DOI: 10.1063/1.4892025

  • A. Pertsev and H. Kohlstedt, Magnetoresistive Memory with Ultralow Critical Current for Magnetization Switching, Adv. Func. Mat. 22, 4696 (2012). DOI: 10.1002/adfm.201200424

  • D. B. Strukov and H. Kohlstedt, (Eds.), Resistive switching phenomena in thin films: Materials, devices, and applications, MRS Bulletin 37, 108 (2012). DOI: 10.1557/mrs.2012.4

  • A. Petraru, R. Soni, and H. Kohlstedt, Tunneling magnetoresistance and electroresistance properties of composite-barrier ferroelectric tunnel junctions, Phys. Sta. Sol.-Rap. Res. Lett. 6, 138 (2012). DOI: 10.1002/pssr.201206227

  • R. Soni, P. Meuffels, H. Kohlstedt, C. Kügeler, and W. Waser, Reliability analysis of the low resistance state stability of Ge0.3Se0.7 based solid electrolyte non-volatile memory cells, Appl. Phys. Lett. 94, 123503 (2009). DOI: 10.1063/1.3117957