Technische Universität Dresden

Heidemarie Krüger

Heidemarie Schmidt
Contact Heidemarie Krüger
ORCID

Contact

Prof. Heidemarie Krüger

Email:heidemarie.schmidt@enas.fraunhofer.de

Research Field and Activities

  • Spintronics
  • Analog Resistive Switches
  • Magnetooptics

Short Biography

Prof. Heidemarie Krüger is a graduate physicist. Since 2017 she is heading the Quantum Detection Department at Leibniz-IPHT and the Solid State Physics group with a focus on quantum detection at the FSU Jena. Prof. Schmidt is a recognized expert in the development and manufacture of electroforming-free memristors. On the one hand, there is the bipolar analog BiFeO3 memristor for robust, sensor-related processing of analog data (Edge Computing), for setting up certifiable and trainable neural networks (IoT, Industry 4.0) and for PUF crypto elements (trustworthy electronics). On the other hand, there is the unipolar, digital YMnO3 memristor for RNG crypto elements (trustworthy electronics). Prof. Schmidt is building up a portfolio of basic and application patents for electroforming-free memristors (2011-2016 at HZDR, since 2016 at FhI ENAS). The BiFeO3 memristor has all the characteristics of an ideal, analog memristor.

Publications

  • Q. Xu, S. Zhou, K. Potzger, M. Helm, H. Hochmuth, M. Lorenz, M. Grundmann, and H. Schmidt, “Room temperature ferromagnetism in ZnO films due to defects,” Applied Physics Letters, vol. 92, no. 8, 2008. DOI: 10.1063/1.2883951.
  • S. Saïghi, C. G. Mayr, T. Serrano-Gotarredona, G. Lecerf, J. Tomas, T. Masquelier, T. Prodromakis, H. Schmidt, R. Tetzlaff, and B. Linares-Barranco, “Plasticity in memristive devices for spiking neural networks,” Frontiers in Neuroscience, vol. 9, 2015. DOI: 10.3389/fnins.2015.00051.
  • S. Zhou, Q. Xu, K. Potzger, G. Talut, R. Grötzschel, J. Fassbender, M. Helm, and H. Schmidt, “Room temperature ferromagnetism in carbon-implanted ZnO,” Applied Physics Letters, vol. 93, no. 23, 2008. DOI: 10.1063/1.3041650.
  • S. Zhou, E. Čižmár, K. Potzger, M. Krause, G. Talut, M. Helm, J. Fassbender, H. Hochmuth, M. Lorenz, M. Grundmann, and H. Schmidt, “Origin of magnetic moments in defective single crystals,” Physical Review B, vol. 79, no. 11, 2009. DOI: 10.1103/PhysRevB.79.113201.
  • D. Fritsch, H. Schmidt, and M. Grundmann, “Band-structure pseudopotential calculation of zinc-blende and wurtzite AlN, GaN, and InN,” Physical Review B, vol. 67, no. 23, 2003. DOI: 10.1103/PhysRevB.67.235205.
  • G. Brauer, W. Anwand, W. Skorupa, J. Kuriplach, O. Melikhova, C. Moisson, and H. Schmidt, “Defects in virgin and N⁺-implanted ZnO single crystals studied by positron annihilation, Hall effect, and deep-level transient spectroscopy,” Physical Review B, vol. 74, no. 4, 2006. DOI: 10.1103/PhysRevB.74.045208.
  • Y. Shuai, S. Zhou, D. Bürger, M. Helm, and H. Schmidt, “Nonvolatile bipolar resistive switching in Au/BiFeO₃/Pt,” Journal of Applied Physics, vol. 109, no. 12, 2011. DOI: 10.1063/1.3598433.
  • T. You, Y. Shuai, W. Luo, N. Du, D. Bürger, I. Skorupa, R. Hübner, S. Henker, H. Schmidt, O. G. Schmidt, T. Mikolajick, and S. Slesazeck, “Exploiting Memristive BiFeO₃ Bilayer Structures for Compact Sequential Logics,” Advanced Functional Materials, vol. 24, no. 21, 2014. DOI: 10.1002/adfm.201303496.
  • Y. Shuai, S. Zhou, D. Bürger, H. Reuther, I. Skorupa, V. John, M. Helm, and H. Schmidt, “Decisive role of oxygen vacancy in ferroelectric versus ferromagnetic Mn-doped BaTiO₃ thin films,” Journal of Applied Physics, vol. 109, no. 8, 2011. DOI: 10.1063/1.3567911.
  • D. Fritsch, H. Schmidt, and M. Grundmann, “Band dispersion relations of zinc-blende and wurtzite InN,” Physical Review B, vol. 69, no. 16, 2004. DOI: 10.1103/PhysRevB.69.165204.