Technische Universität Dresden

Heidemarie Schmidt

Heidemarie Schmidt
Contact Heidemarie Schmidt
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Contact

Prof. Heidemarie Schmidt​

Email:heidemarie.schmidt@enas.fraunhofer.de

Research Field and Activities

  • Spintronics
  • Analog Resistive Switches
  • Magnetooptics

Short Biography

Prof. Heidemarie Schmidt is a graduate physicist. Since 2017 she is heading the Quantum Detection Department at Leibniz-IPHT and the Solid State Physics group with a focus on quantum detection at the FSU Jena. Prof. Schmidt is a recognized expert in the development and manufacture of electroforming-free memristors. On the one hand, there is the bipolar analog BiFeO3 memristor for robust, sensor-related processing of analog data (Edge Computing), for setting up certifiable and trainable neural networks (IoT, Industry 4.0) and for PUF crypto elements (trustworthy electronics). On the other hand, there is the unipolar, digital YMnO3 memristor for RNG crypto elements (trustworthy electronics). Prof. Schmidt is building up a portfolio of basic and application patents for electroforming-free memristors (2011-2016 at HZDR, since 2016 at FhI ENAS). The BiFeO3 memristor has all the characteristics of an ideal, analog memristor.

Publications

  • “Room temperature ferromagnetism in ZnO films due to defects”
    Co-authors: Q. Xu, S. Zhou, K. Potzger, M. Helm, H. Hochmuth, M. Lorenz, M. Grundmann, H. Schmidt
    Published in: Applied Physics Letters, 2008
    LinkGoogle Scholar

  • “Plasticity in memristive devices for spiking neural networks”
    Co-authors: S. Saïghi, C. G. Mayr, T. Serrano-Gotarredona, G. Lecerf, J. Tomas, T. Masquelier, T. Prodromakis, H. Schmidt, R. Tetzlaff, B. Linares-Barranco
    Published in: Frontiers in Neuroscience, 2015
    LinkGoogle Scholar

  • “Room temperature ferromagnetism in carbon-implanted ZnO”
    Co-authors: S. Zhou, Q. Xu, K. Potzger, G. Talut, R. Grötzschel, J. Fassbender, M. Helm, H. Schmidt
    Published in: Applied Physics Letters, 2008
    LinkGoogle Scholar

  • “Origin of magnetic moments in defective single crystals”
    Co-authors: S. Zhou, E. Čižmár, K. Potzger, M. Krause, G. Talut, M. Helm, J. Fassbender, H. Hochmuth, M. Lorenz, M. Grundmann, H. Schmidt
    Published in: Physical Review B, 2009
    LinkGoogle Scholar

  • “Band-structure pseudopotential calculation of zinc-blende and wurtzite AlN, GaN, and InN”
    Co-authors: D. Fritsch, H. Schmidt, M. Grundmann
    Published in: Physical Review B, 2003
    LinkGoogle Scholar

  • “Defects in virgin and -implanted ZnO single crystals studied by positron annihilation, Hall effect, and deep-level transient spectroscopy”
    Co-authors: G. Brauer, W. Anwand, W. Skorupa, J. Kuriplach, O. Melikhova, C. Moisson, H. Schmidt
    Published in: Physical Review B, 2006
    LinkGoogle Scholar

  • “Nonvolatile bipolar resistive switching in Au/BiFeO3/Pt”
    Co-authors: Y. Shuai, S. Zhou, D. Bürger, M. Helm, H. Schmidt
    Published in: Journal of Applied Physics, 2011
    LinkGoogle Scholar

  • “Exploiting Memristive BiFeO₃ Bilayer Structures for Compact Sequential Logics”
    Co-authors: T. You, Y. Shuai, W. Luo, N. Du, D. Bürger, I. Skorupa, R. Hübner, S. Henker, H. Schmidt, O. G. Schmidt, T. Mikolajick, S. Slesazeck
    Published in: Advanced Functional Materials, 2014
    LinkGoogle Scholar

  • “Decisive role of oxygen vacancy in ferroelectric versus ferromagnetic Mn-doped BaTiO₃ thin films”
    Co-authors: Y. Shuai, S. Zhou, D. Bürger, H. Reuther, I. Skorupa, V. John, M. Helm, H. Schmidt
    Published in: Journal of Applied Physics, 2011
    LinkGoogle Scholar

  • “Band dispersion relations of zinc-blende and wurtzite InN”
    Co-authors: D. Fritsch, H. Schmidt, M. Grundmann
    Published in: Physical Review B, 2004