Technische Universität Dresden

Sabina Spiga

Sabina Spiga
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Prof. Dr. Sabina Spiga​
Research Director

CNR-IMM, Agrate Brianza Unit, Italy

Telephone: +39 039 6035938

Email:sabina.spiga@cnr.it

Research Field and Activities

  • In-memory Computing
  • Neuromorphic Computing
  • Resistive Switching Memories
  • Memristive Devices
  • Nanoelectronic Device Fabrication and Testing

Short Biography

​Sabina Spiga is a Research Director at the CNR Institute for Microelectronics and Microsystems (CNR-IMM), Unit of Agrate Brianza, Italy. She specializes in developing oxide-based resistive switching non-volatile memories and memristive devices for neuromorphic systems and novel computing paradigms. Spiga earned her degree in Physics from the University of Bologna in 1995 and completed her Ph.D. in Material Science at the Università di Milano in 2002. She joined the MDM-INFM Laboratory as a post-doctoral fellow in 2002, became a tenure-track researcher in 2004, and secured a permanent researcher position at CNR-IMM in 2009. She was promoted to Senior Researcher in 2018 and to Research Director in January 2020. ​

Throughout her career, Spiga has authored or co-authored over 120 publications in peer-reviewed journals and proceedings, along with eight book chapters. She has presented her research at numerous international conferences and has delivered invited talks and seminars at various universities and Ph.D. schools. Her research focuses on micro/nanoelectronics, in-memory, and neuromorphic computing, particularly in material development, device fabrication, and electrical testing of nanoelectronic devices. She has collaborated with semiconductor companies such as STMicroelectronics, Micron, and IBM, as well as research centers including CEA-LETI, IMEC, and INRIM. ​

Spiga has played a significant role in several European (FP6, FP7, Horizon2020), industrial, and Italian (MIUR-FIRB, Cariplo) R&D projects. She is currently the CNR Principal Investigator of the EU-Horizon2020-ICT project MeM-Scales – “Memory technologies with multi-scale time constants for neuromorphic architectures” (2020-2023) and of the EU-Horizon2020-FET-CSA project NEUROTECH – Neuromorphic Technology (2018-2022). Additionally, she is involved as a key person in the Horizon2020-ECSEL project R3POWER UP – 300mm Pilot Line for Smart Power and Power Discretes (2017–2023) and in the Italian Project (PRIN 2017) COSMO – Analogue Computing with Dynamic Switching Memristor Oscillators: Theory, Devices, and Applications (2020-2023).

References / Publications

  • E. Covi, S. Spiga, S. Brivio, A. Serb, T. Prodromakis, and M. Fanciulli, “Analog Memristive Synapse in Spiking Networks Implementing Unsupervised Learning,” Frontiers in Neuroscience, vol. 10, p. 482, 2016. DOI: https://doi.org/10.3389/fnins.2016.00482
  • M. Lanza, S. Spiga, R. Waser, D. Ielmini, J. J. Yang, L. Goux, J. Suñe, and A. J. Kenyon, “Standards for the Characterization of Endurance in Resistive Switching Devices,” ACS Nano, vol. 15, no. 11, pp. 17214–17231, 2021. DOI: https://doi.org/10.1021/acsnano.1c06980
  • F. Nardi, S. Spiga, D. Ielmini, C. Cagli, M. Fanciulli, L. Goux, and D. J. Wouters, “Control of Filament Size and Reduction of Reset Current Below 10 μA in NiO Resistance Switching Memories,” Solid-State Electronics, vol. 55, no. 4, pp. 770–773, 2011. DOI: https://doi.org/10.1016/j.sse.2010.12.017
  • G. Scarel, E. Bonera, S. Spiga, C. Wiemer, G. Tallarida, and M. Fanciulli, “Atomic-Layer Deposition of Lu₂O₃,” Applied Physics Letters, vol. 85, no. 4, pp. 630–632, 2004. DOI: https://doi.org/10.1063/1.1773360
  • H.-Y. Chen, S. Brivio, C.-C. Chang, J. Frascaroli, S. Spiga, T.-H. Hou, B. Hudec, M. Liu, H. Lv, G. Molas, J. Sohn, V. M. Teja, E. Vianello, and H.-S. P. Wong, “Resistive Random Access Memory (RRAM) Technology: From Material, Device, Selector, 3D Integration to Bottom-Up Fabrication,” Journal of Electroceramics, vol. 39, no. 1–4, pp. 21–38, 2017. DOI: https://doi.org/10.1007/s10832-017-0095-9
  • S. Brivio, S. Spiga, and J. Frascaroli, “Role of Metal-Oxide Interfaces in the Multiple Resistance Switching Regimes of Pt/HfO₂/TiN Devices,” Applied Physics Letters, vol. 107, no. 2, p. 023504, 2015. DOI: https://doi.org/10.1063/1.4926340
  • D. Ielmini, S. Spiga, F. Nardi, C. Cagli, A. Lamperti, E. Cianci, and M. Fanciulli, “Scaling Analysis of Submicrometer Nickel-Oxide-Based Resistive Switching Memory Devices,” Journal of Applied Physics, vol. 109, no. 3, p. 034506, 2011. DOI: https://doi.org/10.1063/1.3544499