Chua Memristor Center
Dicover new nanophysics-based phenomena that can be applied to real-world electronic applications.
Dr. Neil Kemp
University of Nottingham
University Park
Nottingham
NG7 2RD
United Kingdom
Telephone: +44 115 74 87634
Dr Neil Kemp is an Associate Professor in the School of Physics and Astronomy at the University of Nottingham, United Kingdom. He holds a BSc (Hons) and a PhD in Physics from Victoria University of Wellington, New Zealand. Following his doctoral studies, he conducted postdoctoral research at the University of New South Wales in Sydney, Australia, and the Institut de Physique et Chimie des Matériaux de Strasbourg in France.
Since 2009, Dr. Kemp has led a research group specializing in nanophysics, with a focus on the design and development of advanced thin-film and nanoelectronic devices for real-world applications. His recent work centers on developing functional memristors for neuromorphic computing and artificial intelligence, as detailed on kempnanogroup.com. He has authored more than 70 peer-reviewed publications and has an h-index of 23. His research has attracted over £2 million in funding. In 2020, he was appointed a Senior Visiting Research Fellow at Technische Universität Dresden.
Dr. Kemp’s group has recently developed a bespoke Multilayer Thin-Film Deposition System, capable of integrating nanoparticles and quantum dots into complex, multilayer structures comprising metals, semiconductors, and insulators – all with deposition under high-vacuum conditions. This innovation underpins their current work on next-generation optoelectronic memristor devices aimed at enabling high-speed vision recognition systems.
Neil Kemp teaches the following courses:
A. H. Jaafar and N. T. Kemp, “Light-mediated multilevel neuromorphic switching in a hybrid organic–inorganic memristor,” ACS Omega, vol. 9, no. 52, pp. 51641–51651, 2024. DOI: https://doi.org/10.1021/acsomega.4c05015
A. H. Jaafar, S. K. S. Al Habsi, T. Braben, C. Venables, M. G. Francesconi, G. J. Stasiuk, and N. T. Kemp, “Unique coexistence of two resistive switching modes in a memristor device enables multifunctional neuromorphic computing properties,” ACS Applied Materials & Interfaces, vol. 16, no. 33, pp. 43816–43826, 2024. DOI: https://doi.org/10.1021/acsami.4c09460
A. Gee, A. H. Jaafar, B. Brachňaková, J. Massey, C. Marrow, I. Salitros, and N. T. Kemp, “Multilevel resistance switching and enhanced spin transition temperature in single and double molecule spin crossover nanogap devices,” The Journal of Physical Chemistry C, vol. 124, no. 24, pp. 13393–13399, 2020. DOI: https://doi.org/10.1021/acs.jpcc.0c03438
A. H. Jaafar and N. T. Kemp, “Wavelength dependent light tunable resistive switching graphene oxide nonvolatile memory devices,” Carbon, vol. 153, pp. 81–88, Jul. 2019. DOI: https://doi.org/10.1016/j.carbon.2019.07.008
A. H. Jaafar, R. J. Gray, M. O’Neill, S. M. Kelly, E. Verrelli, and N. T. Kemp, “Percolation threshold enables optical resistive-memory switching and light-tuneable synaptic learning in segregated nanocomposites,” Advanced Electronic Materials, vol. 5, no. 7, p. 1900197, 2019. DOI: https://doi.org/10.1002/aelm.201900197
Z. G. Namhil, C. Kemp, E. Verrelli, A. Iles, N. Pamme, A. M. Adawi, and N. T. Kemp, “A label-free aptamer-based nanogap capacitive biosensor with greatly diminished electrode polarization effects,” Physical Chemistry Chemical Physics, vol. 21, pp. 681–691, 2019. DOI: https://doi.org/10.1039/C8CP06299C
A. H. Jaafar, R. J. Gray, E. Verrelli, M. O’Neill, S. M. Kelly, and N. T. Kemp, “Reversible optical switching memristors with tunable STDP synaptic plasticity: a route to hierarchical control in artificial intelligent systems,” Nanoscale, vol. 9, pp. 17091–17101, 2017. DOI: https://doi.org/10.1039/C7NR04988A
J. F. Dayen, V. Faramarzi, M. Pauly, N. T. Kemp, B. Pichon, H. Majjad, S. Begin-Colin, and B. Doudin, “Nanotrench for nano and microparticle electrical interconnects,” Nanotechnology, vol. 33, p. 335303, 2010. DOI: https://doi.org/10.1088/1361-6528/ac6d9a
S. Shi, G. Schmerber, J. Arabski, J.-B. Beaufrand, D. J. Kim, S. Boukari, M. Bowen, N. T. Kemp, N. Viart, G. Rogez, E. Beaurepaire, H. Aubriet, J. Petersen, C. Becker, and D. Ruch, “Study of molecular spin-crossover complex Fe(phen)2_2(NCS)2_2 thin films,” Applied Physics Letters, vol. 95, no. 4, p. 043303, 2009. DOI: https://doi.org/10.1063/1.3190489
N. T. Kemp, D. McGrouther, J. W. Cochrane, R. Newbury, “Bridging the gap: polymer nanowire devices,” Advanced Materials, vol. 19, pp. 2634–2638, 2007. DOI: https://doi.org/10.1002/adma.200602839